Configuration (diode): Single; Enclosure type (semiconductors): DO 214AB; Forward current I(F): 3 A; Forward voltage U(F): 740 mV; Forward voltage reference: 3 A; Manufacturer code (components): VIS; Mounting type: Surface-mount; Operating temperature...
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.
Configuration (diode): Single; Enclosure type (semiconductors): DO 201AD; Forward current I(F): 3 A; Forward voltage U(F): 490 mV; Forward voltage reference: 3 A; Mounting type: Through-hole; Operating temperature (max.): +125 °C; Operating temperature...
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.
Configuration (diode): Single; Enclosure type (semiconductors): TO 277A; Forward current I(F): 10 A; Forward voltage U(F): 680 mV; Forward voltage reference: 10 A; Manufacturer code (components): VIS; Mounting type: Surface-mount; Operating temperature...
Digit height: 10 mm; Factory colour: Red; Forward current I(F): 1 mA; Forward voltage U(F): 1.8 V; Light intensity I(V): 3.6 mcd; No. of digits: 1; Product size (depth): 9.45 mm; Product size (height): 12.6 mm; Product size (width): 11 mm; Shared connection:...
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 400 mV; Creepage distance: 7 mm; Current transfer ratio (max.): 125 %; Current transfer ratio (min.): 63 %; Current transfer ratio (min.) - current reference: 10 mA; Enclosure type...
Collector current: 50 mA; Collector-emitter saturation voltage (max.): 400 mV; Creepage distance: 7 mm; Current transfer ratio (max.): 500 %; Current transfer ratio (min.): 250 %; Current transfer ratio (min.) - current reference: 1 mA; Enclosure type...
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 400 mV; Creepage distance: 7 mm; Current transfer ratio (max.): 80 %; Current transfer ratio (min.): 40 %; Current transfer ratio (min.) - current reference: 10 mA; Enclosure type...