Infineon Technologies CY62158ELL-45ZSXI Flash memory IC TSOP 44 SRAM 8 Mbit 1 M x 8 Tray
Enclosure type (semiconductors): TSOP 44; Memory size (IC): 8 Mbit; Memory type: SRAM; Mounting type: Surface-mount; Operating temperature (max.): +85 °C; Operating temperature (min.) (num): -40 °C; Organisation: 1 M x 8; Packaging type (components):...
Infineon Technologies DF02S Diode bridge EDIP 4 200 V 1 A 1-phase
Rectifiers from leading manufacturers. Full details free to download from our comprehensive product documents library.
Infineon Technologies DF10S Diode bridge EDIP 4 1000 V 1 A 1-phase
Rectifiers from leading manufacturers. Full details free to download from our comprehensive product documents library.
Infineon Technologies Digital transistor BCR108E6327HTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR112E6327HTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR133E6327HTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR133WH6327XTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR135E6327HTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): NPN