Infineon Technologies Transistor (BJT) - Discrete BDP948H6327XTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BDP949H6327XTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BDP950H6327XTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BDP953H6327XTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BFN26E6327HTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BFR92PE6327HTSA1 SOT 23 NPN Tape on Full reel
Collector current: 0.045 A; Collector emitter voltage U(CEO): 15 V; DC current gain hFE - reference current: 70 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete BFR93AE6327HTSA1 SOT 23 NPN Tape on Full reel
Collector current: 0.09 A; Collector emitter voltage U(CEO): 12 V; DC current gain hFE - reference current: 70 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
Infineon Technologies Transistor (BJT) - Discrete, bias voltage BCR133 TO 236 3 No. of channels 1 NPN - biased Tape cut
NPN digital transistor
Infineon Technologies Transistor (BJT) - Discrete, bias voltage BCR135 TO 236 3 No. of channels 1 NPN - biased Tape cut
NPN digital transistor
Infineon Technologies Transistor (BJT) - Discrete SMBT2907A SOT 23-3 No. of channels 1 PNP Tape cut
Collector current: -600 mA; Collector cutoff current: -10 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.): -1.6 V; DC current gain (hFE): 100; DC current gain hFE - reference current: -150 mA; DC current gain hFE...