Infineon Technologies SPP18P06PH MOSFET 1 P-channel 81.1 W TO 220
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -18.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 81.1 W; R(DS)(on): 0.13 Ω; Type (transistors): P-channel
Infineon Technologies SPP20N60C3 MOSFET 1 N-channel 208 W TO 220
Cut-off voltage U(DSS): 650 V; Enclosure type (semiconductors): TO 220; I(d): 20.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel
Infineon Technologies SPP20N60S5 MOSFET 1 N-channel 208 W TO 220
Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 220; I(d): 20 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel
Infineon Technologies SPP80P06PH MOSFET 1 P-channel 340 W TO 220
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -80 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 340 W; R(DS)(on): 0.023 Ω; Type (transistors): P-channel
Infineon Technologies SPW20N60S5 MOSFET 1 N-channel 208 W TO 247
C(ISS): 3000 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 247; I(d): 20 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies Standard diode BAS16 SOT 23-3 80 V 250 mA Tape cut
Switching diode (8 mm tape)
Infineon Technologies TLE6250G V33 Interface IC - transceiver CAN 1/1 DSO 8 PG
Integrated circuits from leading manufacturers. Please read our extensive documentation, which is free to download.
Infineon Technologies Transistor (BJT) - Arrays, bias voltage BCR148S SOT 363 No. of channels 2 NPN - biased Tape cut
Double digital transistor array