Infineon Technologies BSS131 MOSFET 1 N-channel 0.36 W SOT 23
Cut-off voltage U(DSS): 240 V; Enclosure type (semiconductors): SOT 23; I(d): 0.10 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 0.36 W; R(DS)(on): 20 Ω; Type (transistors): N-channel
Infineon Technologies BSS139 MOSFET 1 N-channel 0.36 W SOT 23
Cut-off voltage U(DSS): 250 V; Enclosure type (semiconductors): SOT 23; I(d): 0.10 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 0.36 W; R(DS)(on): 30 Ω; Type (transistors): N-channel
Infineon Technologies BSS169 MOSFET 1 N-channel 0.36 W SOT 23
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SOT 23; I(d): 0.17 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 0.36 W; R(DS)(on): 12 Ω; Type (transistors): N-channel
Infineon Technologies BSS83P MOSFET 1 P-channel 0.36 W SOT 23
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): SOT 23; I(d): -0.33 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 0.36 W; R(DS)(on): 3 Ω; Type (transistors): P-channel
Infineon Technologies BSS84P MOSFET 1 P-channel 0.36 W SOT 23
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): SOT 23; I(d): -0.17 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 0.36 W; R(DS)(on): 12 Ω; Type (transistors): P-channel