Infineon Technologies IRFP7430PBF MOSFET 1 N-channel 366 W TO 247
C(ISS): 14240 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 40 V; Enclosure type (semiconductors): TO 247; I(d): 195 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRFP9140NPBF MOSFET 1 P-channel 140 W TO 247
C(ISS): 1300 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 247; I(d): 23 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRFPE40PBF MOSFET 1 N-channel 150 W TO 247
C(ISS): 1900 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 800 V; Enclosure type (semiconductors): TO 247; I(d): 5.4 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...
Infineon Technologies IRFR024NPBF-GURT MOSFET 1 N-channel 45 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 17 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 45 W; R(DS)(on): 0.075 Ω; Type (transistors): N-channel
Infineon Technologies IRFR1018EPBF-GURT MOSFET 1 N-channel 110 W TO 252AA
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 252AA; I(d): 56 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.0084 Ω; Type (transistors): N-channel
Infineon Technologies IRFR120NPBF-GURT MOSFET 1 N-channel 48 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 9.4 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 48 W; R(DS)(on): 0.21 Ω; Type (transistors): N-channel
Infineon Technologies IRFR220NPBF-GURT MOSFET 1 N-channel 43 W TO 252AA
Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 252AA; I(d): 5 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 43 W; R(DS)(on): 0.6 Ω; Type (transistors): N-channel
Infineon Technologies IRFR3410PBF-GURT MOSFET 1 N-channel 110 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 31 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.039 Ω; Type (transistors): N-channel
Infineon Technologies IRFR3607PBF-GURT MOSFET 1 N-channel 140 W TO 252AA
Cut-off voltage U(DSS): 75 V; Enclosure type (semiconductors): TO 252AA; I(d): 56 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 140 W; R(DS)(on): 0.009 Ω; Type (transistors): N-channel
Infineon Technologies IRFR3710ZPBF-GURT MOSFET 1 N-channel 140 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 140 W; R(DS)(on): 0.018 Ω; Type (transistors): N-channel