Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.2 Ω; Type (transistors): N-channel
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 7.3 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.05 Ω; Type (transistors): N-channel
Cut-off voltage U(DSS): -30 V; Enclosure type (semiconductors): SO 8; I(d): -4.6 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.07 Ω; Type (transistors): P-channel
Cut-off voltage U(DSS): -40 V; Enclosure type (semiconductors): SO 8; I(d): -6.2 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.041 Ω; Type (transistors): P-channel
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.08 Ω; Type (transistors): N-channel
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.16 Ω; Type (transistors): P-channel
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 4 A; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 1.4 W; R(DS)(on): 0.16 Ω; Type (transistors): N-channel , P-channel
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.046 Ω; Type (transistors): N-channel
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.098 Ω; Type (transistors): P-channel
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.098 Ω; Type (transistors): P-channel